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BPD-Free Dicing of Epitaxial SiC Wafers Using Water Jet Guided Laser

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Abstract:

Silicon carbide (SiC) wafers are essential for next-generation power devices, however conventional dicing methods often induce cracks and Basal Plane Dislocations (BPDs), reducing device reliability. This study demonstrates BPD-free dicing of epitaxial SiC wafers using Water jet Guided Laser (WGL) processing. Full-thickness cutting was performed on 350 μm-thickness wafers with a 10 μm-thickness epitaxial layer using a YAG laser (532 nm wavelength, 200 ns pulse width, 10 kHz repetition rate, 30–80 W output) on an LB300 system. BPD evaluation was carried out by X-ray topography (XRT) with the-1-128 reflection before and after cutting. The results showed no generation or propagation of new BPDs, and pre-existing BPDs did not glide, confirming that WGL processing enables BPD-free machining. These results are attributed to the ablation-based nature of WGL with water assistance, which avoids mechanical stress on epitaxial SiC wafers.

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Periodical:

Materials Science Forum (Volume 1193)

Pages:

77-82

DOI:

https://doi.org/10.4028/p-XZ6YqE

Citation:

Cite this paper

Online since:

May 2026

Authors:

Shunya Hirano*, Hyuk Kim, Satoru Takahashi, Shuzo Masui, Noboru Ohtani, Kozo Abe

Keywords:

Basal Plane Dislocations, Laser Ablation, Wafer Dicing, Water Jet Guided Laser

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