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Study on Electrochemical Assisted Fixed-Abrasive Lapping for Wafer Thinning of Monocrystalline Silicon Carbide Wafer

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Abstract:

This study aims to develop an electrochemical assisted fixed-abrasive lapping (ECAL) process for thinning 4H-SiC wafers (C-face). Process with 20 wt% NaNO₃ electrolyte to generate a softened passivation layer has been formed and simultaneously removed by a fixed diamond lap wheel. Electrochemical tests using a potentiostat have verified 20 V as the selected experimental potential, and a significant reduction in hardness has been confirmed by nanoindentation. Under these conditions, the 4-inch wafer has achieved a material removal rate (MRR) of 3.181 μm/h with wafer quality (Bow –7.80 μm, Warp 48.50 μm, TTV 7.70 μm). When the same conditions have been applied to 6-inch wafers, an MRR of 2.457 μm/h and wafer quality (Bow –5.00 μm, Warp 36.70 μm, TTV 6.60 μm) have been obtained. These results have demonstrated the scalability of ECAL for larger SiC substrates, offering potential for next-generation device manufacturing.

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Periodical:

Materials Science Forum (Volume 1193)

Pages:

83-88

DOI:

https://doi.org/10.4028/p-eyjUb3

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Online since:

May 2026

Authors:

Chen Hang Wu, Chao Jun Zhang, Shao Yuan Huang*, Chao Chang Arthur Chen

Keywords:

Electrochemical Passivation, Fixed-Abrasive Lapping, Polarization Curve, Silicon Carbide (SiC), Wafer Thinning

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Creative Commons CC BY 4.0

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References

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