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Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

ToC:

Table of Contents

Paper Title Page

Electronic Properties of the (001) Surface of Diamond Covered with Hydrogen
Authors: V.I. Gavrilenko
555
Characterization of Semiconductor Surfaces and Interfaces by X-Ray Reflectivity Measurements
Authors: W. Plotz, V. Holy, W.V.D. Hoogenhof, W. Ahrer, N. Frank, C. Schiller, K. Lischka
561
Spatial Confinement of Misfit Dislocations at the Interfaces of Epitaxial CdSe/GaAs(111) and ZnTe/GaAs(111) Studied by TEM
Authors: A. Rosenauer, H. Stanzl, K. Wolf, S. Bauer, M. Kastner, M. Grün, W. Gebhardt
567
Coulomb Energy of Traps in Semiconductor Space Charge Regions
Authors: M. Schulz
573
Effect of Interface on Capture and Emission Processes via Deep Centers
Authors: I.N. Yassievich, A.A. Pakhomov
579
Heteroepitaxy of GaAs on Porous Silicon: The Structure of the Interface
Authors: T. Kovyazina, A. Kutas, V. Khitko, P. Gaiduk, F. Komarov, V. Solov'ev, V. Bondarenko, G. Troyanova
583
Evidence for an Assisted Defect Mechanism Leading to a Reduced Apparent Band Offset
Authors: Didier Stiévenard, X. Letartre, Michel Lannoo, S. Ababou, Gérard Guillot
587
Impurity-Enhanced Disordering in Superlattices
Authors: J. Bernholc, B. Chen, Q. Zhang, C. Wang, B. Yakobson
593
Exciton Spectroscopy of Near-Surface GaAs/Al0.3Ga0.7As Quantum Wells - The New Method of Band Bending Investigation
Authors: V.N. Astratov, Yu. A. Vlasov
599
Thermally Induced Compositional Disordering of InGaAs/GaAs and GaAsSb/GaAs Single Quantum Wells
Authors: A. Kozanecki, W.P. Gillin, Brian J. Sealy, K.E. Singer
605

Showing 91 to 100 of 275 Paper Titles

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