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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147

Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

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Paper Title Page

Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga_1-xAl_xSb/InAs/Ga_1-xAl_xSb Single Quantum Wells

Authors: Hans Jürgen von Bardeleben, M.O. Manasreh, C.E. Stutz

611

Tuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AlGaAs Heterostructures

Authors: P. Wiśniewski, T. Suski, L.H. Dmowski, I. Gorczyca, P. Sobkowicz, J. Smoliner, E. Gornik, G. Böhm, G. Weimann

617

DX Centers in Reduced Dimensionality n-Type AlGaAs Structures

Authors: Ignacio Izpura, Elias Muñoz Merino, Enrique Calleja, F. Garcia

623

Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells

Authors: Peder Bergman, P.O. Holtz, Bo Monemar, M. Sundaram, J.L. Merz, A.C. Gossard

629

Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces

Authors: J.R. Botha, A.W.R. Leitch

635

Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells

Authors: G. Brunthaler, M. Seto, G. Stöger, G. Ostermayer, K. Köhler

641

Si Diffusion out of δ-Planes in a GaAs Superlattice

Authors: L. Hart, P.F. Fewster, M.J. Ashwin, M.R. Fahy, R.C. Newman

647

Luminescence of a Delta Doping Related Exciton in GaAs:Si

Authors: J.C.M. Henning, Y.A.R.R. Kessener, Paul M. Koenraad, M.R. Leys, W.C. van der Vleuten, J.H. Wolter, A.M. Frens

653

Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells

Authors: P.O. Holtz, Q.X. Zhao, Bo Monemar, M. Sundaram, J.L. Merz, A.C. Gossard

657

The Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si δ-Doped GaAs

Authors: Paul M. Koenraad, István Bársony, A.F.W. van der Stadt, J. Perenboom, J.H. Wolter

663