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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147

Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

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Table of Contents

Paper Title Page

Point Defects in SiGe Epitaxial Layers and Bulk Crystals

Authors: H.B. Erzgräber, G. Kissinger, D. Krüger, T. Morgenstern, K. Schmalz, J. Schilz, M. Kurten, A. Osinsky

489

Defect Characterization in P Isotype Si/SiGe/Si Heterostructures by Space Charge Spectroscopy

Authors: G. Bremond, A. Souifi, P. Degroodt, P. Warren, D. Dutartre, Gérard Guillot

495

Test for the Impurity Wavefunction Modelling from the Alloy Broadening of the Impurity-Related Luminescence

Authors: Jerzy M. Langer, Ryszard Buczko

501

Strain Relaxation During Epitaxial Crystallization of Ge_xSi_1-x Alloy Layers Produced by Ion-Implantation

Authors: R.G. Elliman, W.C. Wong

507

Rapid Thermal Annealing of Ion Implanted Strained Si_1-xGe_x

Authors: E.V. Thomsen, Arne Nylandsted-Larsen, J.L. Hansen, P. Kringhøj, S.Y. Shiryaev, G. Weyer

513

Diffusion, Interface Mixing and Schottky Barrier Formation

Authors: W. Walukiewicz

519

Strain Relaxation in Thin ZnTe Epilayers on GaAs and ZnSe/GaAs

Authors: S. Bauer, Martin Huber, C. Rüth, P. Link, W. Gebhardt

531

1D Properties of Straight Dislocation Segments in Si and Ge

Authors: E.A. Steinman

537

Metastable Surface Defects in p-Type GaAs

Authors: Nikolai T. Bagraev

543

Raman Study of Misfit Dislocations in ZnSe/GaAs Structures

Authors: W. Bała, M. Drozdowski, M. Kozielski

549