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Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

ToC:

Table of Contents

Paper Title Page

Study of Indium Implanted GaAs: Positron Annihilation and Electrical Measurements
Authors: Wulf Pfeiffer, L. Liszkay, A. Burchard, Manfred Deicher, R. Magerle, C. Ronning, Kimmo Saarinen, Pekka J. Hautojärvi
305
Fine Structure of the (Fe2+, h) Bound States in GaP and InP
Authors: L. Podlowski, R. Heitz, T. Wolf, Andreas Hoffmann, Dieter Bimberg, I. Broser, W. Ulrici
311
New Evidence for Bound States in the Charge Transfer Spectra of Transition-Metal-Doped III-V Semiconductors
Authors: T. Wolf, W. Ulrici, D. Côte, B. Clerjaud, Dieter Bimberg
317
FTIR Absorption and Photoluminescence Study of a New Defect System in GaP:Fe:S
Authors: J.M. Schneider, Klaus Thonke, W. Ulrici, R. Sauer
323
New Aspects of (Semi-Insulating) GaP:Cu
Authors: C. Eder, Viktor Schlosser, R.P. Leon, Kin Man Yu, Eicke R. Weber
329
Isotopic Structure and the Jahn-Teller Effect in Fe-Doped III-V Materials
Authors: A.M. Hennel, Andrzej Wysmolek, Rafał Bożek
335
Native Vacancies in Semi-Insulating GaAs Observed by Positron Lifetime Spectrocopy under Photoexcitation
Authors: Kimmo Saarinen, S. Kuisma, Pekka J. Hautojärvi, C. Corbel, C. LeBerre
341
Positron Annihilation at Ionized Acceptors and Vacancies in Indium Phosphide After Electron Irradiation
Authors: M. Törnqvist, J. Nissilä, F.M. Kiessling, C. Corbel, Kimmo Saarinen, A.P. Seitsonen, Pekka J. Hautojärvi
347
Properties of Important Deep Level T3 in Semi-Insulating Gallium Arsenide
Authors: U.V. Desnica, M. Pavlović, Dunja I. Desnica, B. Šantić, T. Šmuc
353
Electron and Hole Traps in AlAs p+-n Junctions Grown by MBE
Authors: P. Krispin, R. Hey
359

Showing 51 to 60 of 275 Paper Titles

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