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Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

ToC:

Table of Contents

Paper Title Page

On the Sensitivity of Optical Reflectivity Spectra to the Bulk Defects in Semiconductors - Example of Crystalline Si
Authors: Ryszard Iwanowski, B.J. Kowalski, B.A. Orłowski, Jadwiga Bak-Misiuk
183
Detection of Defects Responsible for Lifetime in p-Type Si
Authors: M. Zazoui, J.C. Bourgoin, Didier Stiévenard, D. Deresmes
189
Spin Dependent Photoconductivity in Silicon-on-Sapphire
Authors: R.C. Barklie, C. O'Raifeartaigh, L. Bradley, A.M. Hodge
195
Group-V Antisite Defects, VGa , in GaAs
Authors: Ulrich Kaufmann
201
Electronic Structure of PIn Antisite in InP
Authors: W.M. Chen, P. Dreszer, R.P. Leon, Eicke R. Weber, E. Sörman, Bo Monemar, B.W. Liang, C.W. Tu
211
On the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double Resonance
Authors: Johann Martin Spaeth, K. Krambrock, M. Hesse
217
The Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model
Authors: Hans Jürgen von Bardeleben, Christian Delerue, Didier Stiévenard
223
The Assignment of the 78/203meV Double Acceptor in GaAs to BAs Impurity Antisite Centers
Authors: R.C. Newman, B.R. Davidson, R. Addinall, R. Murray, J.W. Emmert, J. Wagner, W. Götz, G. Roos, Gerhard Pensl
229
Interaction of Atomic Hydrogen with Arsenic Antisites and Arsenic Interstitials in Gallium Arsenide
Authors: Aldo Amore Bonapasta
235
Incorporation of Be Into Inx Ga1-x As (0.004≤x≤0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes
Authors: A.L. Alvarez, J. Wagner, F. Calle, Manfred Maier, G. Gutierrez, A. Sacedon, Enrique Calleja, Elias Muñoz Merino
241

Showing 31 to 40 of 275 Paper Titles

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