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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147

Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

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Table of Contents

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Paper Title Page

Endor and ODEPR Investigation of the Microscopic Structure of the Boron Acceptor in 6H-SiC

Authors: J. Reinke, Ralf Müller, M. Feege, Siegmund Greulich-Weber, Johann Martin Spaeth

63

Nitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC)

Authors: W. Götz, Adolf Schöner, W. Suttrop, Gerhard Pensl, Wolfgang J. Choyke, R. Steiner, S. Leibenzeder

69

Magnetic Circular Dichroism and Optically Detected EPR of a Vanadium Impurity in 6H-Silicon Carbide

Authors: J. Reinke, H. Weihrich, Siegmund Greulich-Weber, Johann Martin Spaeth

75

Boron in Cubic Silicon Carbide: Dynamic Effects in ESR

Authors: V. Bratus, N.P. Baran, V.M. Maksimenko, T. Petrenko, V. Romanenko

81

ODMR Studies of MOVPE-Grown GaN Epitaxial Layers

Authors: M. Kunzer, Ulrich Kaufmann, Karin Maier, J. Schneider, N. Herres, Isamu Akasaki, Hiroshi Amano

87

Iron Acceptors in Gallium Nitride (GaN)

Authors: Karin Maier, M. Kunzer, Ulrich Kaufmann, J. Schneider, Bo Monemar, Isamu Akasaki, Hiroshi Amano

93

Donors in Wurtzite GaN Films: A Magnetic Resonance and Photoluminescence Study

Authors: W.E. Carlos, Jaime A. Freitas, M. Asif Khan, D.T. Olson, J.N. Kuznia

99

The Bound Exciton Model for Isoelectronic Centers in Silicon

Authors: Gordon Davies, Maria Helena Nazaré

105

Near-Surface Reactions of Gold and Silver in Silicon

Authors: H. Feichtinger, E. Sturm

111

A New Photoluminescent Center in Mercury-Doped Silicon

Authors: Anne Henry, Bo Monemar, Peder Bergman, J. Lennart Lindström, Y. Zhang, James W. Corbett

117

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