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Materials Science Forum Vols. 143-147

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147

ToC:

Table of Contents

Paper Title Page

Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C
Authors: B.R. Davidson, R.C. Newman, R.E. Pritchard, D.A. Robbie, M.J.L. Sangster, J. Wagner, A. Fischer, K. Ploog
247
Theory of Carbon Complexes in Gallium Arsenide and Aluminium Arsenide
Authors: R. Jones, Sven Öberg
253
Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy
Authors: J. Wagner, M. Ramsteiner, M.J. Ashwin, M.R. Fahy, R.C. Newman, W. Braun, K. Ploog
259
Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs
Authors: M.J. Ashwin, R. Addinall, M.R. Fahy, R.C. Newman, I. Silier, E. Bauser
265
The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP
Authors: G. Weyer, P. Kringhøj, Kristian Freitag
271
Nitrogen-Hydrogen Complexes in GaP and GaAs
Authors: W.S. Hahn, B. Clerjaud, D. Côte, F. Gendron, C. Porte, W. Ulrici, Dariusz Wasik, W. Wilkening
277
Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide
Authors: H.C. Alt
283
Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As
Authors: A.C. Irvine, D.W. Palmer, J.S. Roberts
289
Defects in Electron Irradiated GaP and GaInP
Authors: M.A. Zaidi, H. Maaref, M. Zazoui, J.C. Bourgoin
295
Positron Lifetime Investigations of Electron Irradiated InP
Authors: Th. Bretagnon, S. Dannefaer, D. Kerr
299

Showing 41 to 50 of 275 Paper Titles

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