Paper Titles

Oxygen Precipitation in CZ Silicon Crystals Contaminated with Iron
p.1859

Evaluation Method of Precipitated Oxygen Concentration in Low Resistivity Silicon Wafers Using X-Ray Diffration
p.1865

Precipitates in Antimony Implanted Silicon
p.1871

Secondary Defects and Deep Levels in N-Si Induced by High Energy P Ion Implantation
p.1875

High Energy Si, Zn and Ga Ion Implantation into GaAs on Si
p.1881

Local Structure Analysis around Arsenic Implanted into Silicon by XAFS Technique
p.1887

Effects of Si₃N₄ Films on Diffusion of Boron and Extended Defects in Silicon during Post-Implantation Annealing
p.1891

Photoluminescence Defect Diagnostics in Poly-Si Thin Films
p.1897

DLTS of Polysilicon Emitter Solar Cells
p.1903

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201High Energy Si, Zn and Ga Ion Implantation into...

High Energy Si, Zn and Ga Ion Implantation into GaAs on Si

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1881-1886

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1881

Citation:

Cite this paper

Online since:

November 1995

Authors:

M. Tamura, T. Saitoh

Keywords:

GaAs on Si, High Energy Ion Implantation, TEM, Threading Dislocation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: