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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Local Structure Analysis around Arsenic Implanted...

Local Structure Analysis around Arsenic Implanted into Silicon by XAFS Technique

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1887-1890

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1887

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Online since:

November 1995

Authors:

Yoshimasa Horii, Masataka Kase, Satoshi Komiya, Yusuke Kikuchi

Keywords:

As, Ion Implantation, Silicon, Synchrotron Radiation (XRD), XAFS

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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