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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Secondary Defects and Deep Levels in N-Si Induced...

Secondary Defects and Deep Levels in N-Si Induced by High Energy P Ion Implantation

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1875-1880

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1875

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Online since:

November 1995

Authors:

S. Tatsukawa, Yuko Nakahara, Satoshi Matsumoto

Keywords:

High Energy Ion Implantation, Oxygen Gettering, Secondary Defects

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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