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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Ab Initio Calculation for G-Values of ESR Centers...

Ab Initio Calculation for G-Values of ESR Centers in a-Si:H

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1997-0

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1997

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Online since:

November 1995

Authors:

Hideki Katagiri

Keywords:

Electronic Structure, G-Value, Semiconductor

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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