Paper Titles

ODMR Investigation of Near-Surface Damage Induced by Dry-Etching Process Using GaAs/AlAs Quantum Well Structures
p.1927

Novel Technique for Reliable AlGaAs/GaAs Light Emitting Diodes on Si Using GaAs Islands Active Regions
p.1933

Thermal and Athermal Migration of Ion-Irradiation Defects in Al_0.3Ga_0.7As/GaAs Heterostructures
p.1939

Characterization of Mg+F, Mg+Ar Dual Ion Implanted Al_xGa_1-xAs(0≤x≤0.75) Layers
p.1943

Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scannig Tunneling Microscopy
p.1949

Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAs
p.1955

Optical and Electrical Characterisation of He Plasma Sputtered n-GaAs
p.1961

Contamination and Cleaning of GaAs-(100) Surfaces
p.1967

Characterization of Electron Traps in n-InP Induced by Hydrogen Plasma
p.1973

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Atomic-Scale Studies of Point Defects in Compound...

Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scannig Tunneling Microscopy

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1949-1954

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1949

Citation:

Cite this paper

Online since:

November 1995

Authors:

S. Gwo, S. Miwa, H. Ohno, Jun Fei Fan, H. Tokumoto

Keywords:

Compound Semiconductor, Defect Cluster, Dopant Impurity, Point Defect, Scanning Tunneling Microscopy, Vacancy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: