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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Thermal and Athermal Migration of Ion-Irradiation...

Thermal and Athermal Migration of Ion-Irradiation Defects in Al_0.3Ga_0.7As/GaAs Heterostructures

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1939-1942

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1939

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Online since:

November 1995

Authors:

Toshihiko Kanayama, Toshimi Wada, Yoshinobu Sugiyama

Keywords:

Deep Penetration of Defects, Heterostructures of Compound Semiconductors, In Situ Hall Measurements, Process Induced Defects, Two-Dimensional Electron Gas

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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