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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Room Temperature Defect Etching of III-V Compounds...

Room Temperature Defect Etching of III-V Compounds and Alloys Grown on Si Substate Using Hydrogen Fluoride and Nitric Acid

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1923-1926

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1923

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Online since:

November 1995

Authors:

Hironobu Nishikawa, T. Soga, Takashi Jimbo, Masayoshi Umeno

Keywords:

AlGaAs, Dislocation, Etch Hillock, Etch Pit, Etching, GaAsP, III-V/Si

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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