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Spin-Dependent Transport in SiC and III-V Semiconductor Devices
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Room Temperature Defect Etching of III-V Compounds and Alloys Grown on Si Substate Using Hydrogen Fluoride and Nitric Acid
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ODMR Investigation of Near-Surface Damage Induced by Dry-Etching Process Using GaAs/AlAs Quantum Well Structures
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Novel Technique for Reliable AlGaAs/GaAs Light Emitting Diodes on Si Using GaAs Islands Active Regions
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Thermal and Athermal Migration of Ion-Irradiation Defects in Al_0.3Ga_0.7As/GaAs Heterostructures
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Characterization of Mg+F, Mg+Ar Dual Ion Implanted Al_xGa_1-xAs(0≤x≤0.75) Layers
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Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scannig Tunneling Microscopy
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Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Novel Technique for Reliable AlGaAs/GaAs Light...

Novel Technique for Reliable AlGaAs/GaAs Light Emitting Diodes on Si Using GaAs Islands Active Regions

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Abstract:

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1933-1938

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1933

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Online since:

November 1995

Authors:

Yuki Hasegawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Keywords:

Droplet Epitaxy, LEDs on Si, Reliability, Self-Formed GaAs Islands

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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