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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Spin-Dependent Transport in SiC and III-V...

Spin-Dependent Transport in SiC and III-V Semiconductor Devices

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1915-1922

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1915

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Online since:

November 1995

Authors:

N.M. Reinacher, M.S. Brandt, M. Stutzmann

Keywords:

Electrically Detected Magnetic Resonance, GaAs, Gallium Nitride (GaN), GaP, Light Emitting Diode (LED), Photoconductivity, Silicon Carbide (SiC)

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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