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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Characterization of Electron Traps in n-InP...

Characterization of Electron Traps in n-InP Induced by Hydrogen Plasma

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1973-1978

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1973

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Online since:

November 1995

Authors:

Yoshifumi Sakamoto, Takashi Sugino, Koichiro Matsuda, Junji Shirafuji

Keywords:

Hydrogen Passivation, Hydrogen Plasma, InP, Isothermal Capacitance Transient Spectroscopy ICTS, Plasma-Induced Defects

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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