Paper Titles

(1 - 3) MeV / amu Heavy Ion Irradiaiton Effects on Optical Properties of Al₂O₃
p.399

Ion Beam Analysis and Applications in On-Line Monitoring of Ion Induced Modifications of Materials
p.405

Thin-Film Morphology and Rutherford Backscattering Spectrometry
p.409

Electronic Sputtering and Desorption Effects in TOF-SIMS Studies Using Slow Highly Charged Ions like Au⁶⁹⁺
p.413

Ion Channeling Study of GaN Single Crystals
p.419

Highly Focused Ion Beams in Integrated Circuit Testing
p.427

Atomic Structure and Electrical Properties of a Supertip Gas Field-Ion Source
p.433

High Energy Ion Microprobes: Where are we going?
p.439

Application of Highly Focused Ion Beams
p.445

HomeMaterials Science ForumMaterials Science Forum Vols. 248-249Ion Channeling Study of GaN Single Crystals

Ion Channeling Study of GaN Single Crystals

Article Preview

Abstract:

You might also be interested in these eBooks

Materials Science Applications of Ion Beam Techniques

Info:

Periodical:

Materials Science Forum (Volumes 248-249)

Pages:

419-426

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.248-249.419

Citation:

Cite this paper

Online since:

May 1997

Authors:

Andrzej Turos, Lubomir J. Nowicki, A. Stonert, M. Leszczyński, I. Grzegory, Sylwester Porowski

Keywords:

Crystal Growth, Gallium Nitride (GaN), Ion Beam Analysis, Wide Band Gap Semiconductor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: