Paper Titles

Effects of Hydrogen Plasma on Dislocation Motion in Silicon
p.313

Hydrogenation of Copper Related Deep States in n-Type Si Containing Extended Defects
p.319

Hydrogenation of Deep Defect States in n-Type Si Containing Extended Defects and Transition Metal (Ni or Fe)
p.325

Metastable Defects and Recombination in Hydrogenated Amorphous Silicon
p.331

Tracing Diffusion by Laplace Deep-Level Spectroscopy
p.337

Defects in AS-Grown Silicon and their Evolution During Heat Treatments
p.341

An Investigation of the Possibility that Oxygen Diffusion in Czochralski Silicon is Catalyzed during Clustering
p.347

Temperature-Dependent Widths of Infrared and Far-Infrared Absorption Lines of Oxygen in Silicon
p.355

The Oxygen Dimer in Silicon: Some Experimental Observations
p.361

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Tracing Diffusion by Laplace Deep-Level...

Tracing Diffusion by Laplace Deep-Level Spectroscopy

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

337-340

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.337

Citation:

Cite this paper

Online since:

December 1997

Authors:

K. Bonde Nielsen, L. Dobaczewski

Keywords:

Diffusion, Hydrogen, Ion Implantation, Laplace DLTS, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: