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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263An Investigation of the Possibility that Oxygen...

An Investigation of the Possibility that Oxygen Diffusion in Czochralski Silicon is Catalyzed during Clustering

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

347-354

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.347

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Online since:

December 1997

Authors:

S.A. McQuaid, B.K. Johnson, Robert J. Falster, K.F. Kelton

Keywords:

Clustering, Diffusion, Oxygen, Precipitation, Silicon, Thermal Donor

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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