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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Formation of Oxygen Dimers in Silicon during...

Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

367-372

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.367

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Online since:

December 1997

Authors:

J. Lennart Lindström, T. Hallberg, P. Liberski, Bengt Gunnar Svensson, L.I. Murin, V.P. Markevich

Keywords:

Defect, Electron Irradiation, Oxygen Dimer, Silicon, Thermal Donor

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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