Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

385-390

DOI:

10.4028/www.scientific.net/MSF.258-263.385

Citation:

P. Liberski et al., "Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C", Materials Science Forum, Vols. 258-263, pp. 385-390, 1997

Online since:

December 1997

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$35.00

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