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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Determination of Stoichiometry and Oxygen Content...

Determination of Stoichiometry and Oxygen Content in Platelike and Octahedral Oxygen Precipitates in Silicon with FT-IR Spectroscopy

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

405-410

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.405

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Online since:

December 1997

Authors:

Olivier De Gryse, Paul Clauws, Jan Vanhellemont, Cor Claeys

Keywords:

Infrared Spectroscopy, Oxygen, Precipitation, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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