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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Hydrogenation of Deep Defect States in n-Type Si...

Hydrogenation of Deep Defect States in n-Type Si Containing Extended Defects and Transition Metal (Ni or Fe)

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

325-330

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.325

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Online since:

December 1997

Authors:

M. Kaniewska, J. Kaniewski, L. Ornoch, Takashi Sekiguchi, Koji Sumino

Keywords:

DLTS, Extended Defects, Hydrogenation, Nickel and Iron Related Deep States, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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