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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263The Orthorhombic FeIn Complex in Silicon

The Orthorhombic FeIn Complex in Silicon

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

455-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.455

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Online since:

December 1997

Authors:

Per Tidlund, Mats Kleverman

Keywords:

Fe, FT-IR, In, Silicon, Uniaxial Stress, Zeeman

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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