In-Situ Control of Stoichiometry in Room Temperature MBE-Growth of ZrO2 Thin Films Using a Novel Hyperthermal Oxygen Atom Source

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Periodical:

Materials Science Forum (Volumes 287-288)

Edited by:

Horst Hoffmann

Pages:

181-184

DOI:

10.4028/www.scientific.net/MSF.287-288.181

Citation:

E. Wisotzki et al., "In-Situ Control of Stoichiometry in Room Temperature MBE-Growth of ZrO2 Thin Films Using a Novel Hyperthermal Oxygen Atom Source", Materials Science Forum, Vols. 287-288, pp. 181-184, 1998

Online since:

August 1998

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