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Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3
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Comparison of HF and Ozone Treated SiC Surfaces
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Preparation and Characterization of Hydrogen Terminated 6H-SiC
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Polytype and Polarity of Silicon Carbide and Aluminium Nitride Films Growing by MBE: A Nondestructive Identification
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Surface Abstraction Reactions at Experimental Temperatures; a Theoretical Study of 4H-SiC(0001)
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Combined Scanning Tunneling Microscopy and Photoemission Studies of the β-SiC(100) c(4x2) Surface Reconstruction
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Investigation of the SiC Surface after Nitrogen Plasma Treatment
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Surface Abstraction Reactions at Experimental...

Surface Abstraction Reactions at Experimental Temperatures; a Theoretical Study of 4H-SiC(0001)

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

231-234

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.231

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Online since:

January 2001

Authors:

Jenny Olander, Karin Larsson

Keywords:

Abstraction, Adsorption, Quantum Mechanical Calculations

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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