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Preparation and Characterization of Hydrogen Terminated 6H-SiC
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Polytype and Polarity of Silicon Carbide and Aluminium Nitride Films Growing by MBE: A Nondestructive Identification
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Surface Abstraction Reactions at Experimental Temperatures; a Theoretical Study of 4H-SiC(0001)
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Combined Scanning Tunneling Microscopy and Photoemission Studies of the β-SiC(100) c(4x2) Surface Reconstruction
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Polytype and Polarity of Silicon Carbide and...

Polytype and Polarity of Silicon Carbide and Aluminium Nitride Films Growing by MBE: A Nondestructive Identification

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

227-230

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.227

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Online since:

January 2001

Authors:

Bernd Schröter, A. Winkelmann, Andreas Fissel, V. Lebedev, W. Richter

Keywords:

Electron Channeling, Molecular Beam Epitaxy, Photoelectron Diffraction, Polarity, Polytype

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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