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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Room Temperature Initial Oxidation of 6H- and...

Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

215-218

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.215

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Online since:

January 2001

Authors:

F. Amy, Y. Hwu, Christian Brylinski, P. Soukiassian

Keywords:

4H-SiC (0001), 6H-SiC(0001), Core Level Photoemission, Interface, Oxidation, Surface

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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