Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate
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p.3
Sponsors and Committees
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p.4
Preface
p.6
p.6
Overview
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p.8
Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling
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p.9
Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method
p.13
p.13
On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates
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p.17
Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
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p.21
Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation
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p.25
Sponsors and Committees
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
4-4
Online since:
September 2003
Сopyright:
© 2003 Trans Tech Publications Ltd. All Rights Reserved
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