Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

3-8

Citation:

H. Nagasawa et al., "Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate", Materials Science Forum, Vols. 433-436, pp. 3-8, 2003

Online since:

September 2003

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[2] H. Nagasawa, K. Yagi, T. Kawahara, J. Crystal Growth 237-239 (2002) 1244.

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[5] H. Iwata, U. Lindefelt, S. Oberg, P. Briddon, Mater. Sci. Forum 389-393 (2002) p.439.

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