Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate

Hiroyuki Nagasawa; Kuniaki Yagi; Takamitsu Kawahara; Naoki Hatta

doi:10.4028/www.scientific.net/MSF.433-436.3

Paper Titles

Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate
p.3

Sponsors and Committees
p.4

Preface
p.6

Overview
p.8

Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, ¹³C Labeling of Source Material and Numerical Modeling
p.9

Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method
p.13

On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates
p.17

Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
p.21

Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation
p.25

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Properties of Free-Standing 3C-SiC Monocrystals...

Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

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3-8

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.3

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Online since:

September 2003

Authors:

Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta

Keywords:

3C-SiC, Anisotropy, Hall-Effect, Heteroepitaxy, Twin Boundary, Undulant-Si, XRC

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References

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