On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

17-20

Citation:

D. Schulz et al., "On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates", Materials Science Forum, Vols. 433-436, pp. 17-20, 2003

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September 2003

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[2] K. Böttcher and D. Schulz, presented at ECSCRM2002 (Linköping, Sweden, 2002).

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DOI: https://doi.org/10.1016/s0921-5107(98)00530-3

[4] C. Moulin, G. Feuillet, C. Faure, G Rolland, T. Billon, and E. Pernot, in Technical Digest of International Conference on SiC and Related Materials, Tsukuba, Japan, 2001, pp.252-253.

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