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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436On the Early Stages of Sublimation Growth of...

On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

17-20

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.17

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Online since:

September 2003

Authors:

D. Schulz, M. Lechner, H. J. Rost, D. Siche, Jürgen Wollweber

Keywords:

4H-SiC, Physical Vapor Transport, Single Crystal Growth, Surface Morphology

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Matsunami and T. Kimoto: Mater. Sci. Engineer. R Vol. 20 (1997), p.125.

[2] K. Böttcher and D. Schulz, presented at ECSCRM2002 (Linköping, Sweden, 2002).

[3] D. Schulz, G. Wagner, J. Doerschel, J. Dolle, W. Eiserbeck, T. Müller, H. -J. Rost, D. Siche, and J. Wollweber: Mater. Sci. Engineer. B Vol. 61-62 (1999), p.86.

DOI: 10.1016/s0921-5107(98)00530-3

[4] C. Moulin, G. Feuillet, C. Faure, G Rolland, T. Billon, and E. Pernot, in Technical Digest of International Conference on SiC and Related Materials, Tsukuba, Japan, 2001, pp.252-253.

[5] E.K. Sanchez, A. Kopec, S. Poplawski, R. Ware, S. Holmes, S. Wang, and A. Timmerman: Mater. Sci. Forum Vol. 389-393 (2002), p.71.

DOI: 10.4028/www.scientific.net/msf.389-393.71