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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Stress Analysis of SiC Bulk Single Crystal Growth...

Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

13-16

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.13

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Online since:

September 2003

Authors:

Shin Ichi Nishizawa, Yumi Michikawa, Tomohisa Kato, Fusao Hirose, Naoki Oyanagi, Kazuo Arai

Keywords:

Bulk Growth, Numerical Simulation, Silicon Carbide (SiC), Stress, Sublimation

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.4028/www.scientific.net/msf.389-393.83

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[6] M. Sleder, L. Kadinski, D. Durst and D. Hofmann: J. Crystal Growth Vol. 226 (2001), p.501.

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[8] Flux-Expert, SIMULOG, France.

[9] K. Kamitani, M. Grimsdditch, J.C. Nipko and C.K. Loong: J. Appl. Phys. Vol. 82 (1997), p.3152.

[10] M. Pons, private communication.