Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate
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p.3
Sponsors and Committees
p.4
p.4
Preface
p.6
p.6
Overview
p.8
p.8
Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling
p.9
p.9
Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method
p.13
p.13
On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates
p.17
p.17
Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
p.21
p.21
Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation
p.25
p.25
Overview
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
8-8
Online since:
September 2003
Сopyright:
© 2003 Trans Tech Publications Ltd. All Rights Reserved
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