Paper Titles

Effect of Annealing on Gold Rectifying Contacts in Amorphous Silicon
p.96

Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz
p.100

Batch Processing Method to Deposit a-Si:H Films by PECVD
p.104

Influence of the Rapid Thermal Annealing on the Properties of Thin a-Si Films
p.108

Role of Substrate on the Growth Process of Polycrystalline Silicon Thin Films by Low-Pressure Chemical Vapour Deposition
p.112

Spiral Inductors on Silicon for Wireless Communications
p.116

Silicon Etching in CF₄/O₂ and SF₆ Atmospheres
p.120

Optimisation of a Home-Made RIE System - Effect of SF₆ Plasma on the Properties of Partially Etched a-Si:H Films
p.124

Optical and Morphological Properties of Annealed PbS Thin Films Obtained from a Chemical Solution.
p.128

HomeMaterials Science ForumMaterials Science Forum Vols. 455-456Role of Substrate on the Growth Process of...

Role of Substrate on the Growth Process of Polycrystalline Silicon Thin Films by Low-Pressure Chemical Vapour Deposition

Article Preview

Abstract:

You might also be interested in these eBooks

Advanced Materials Forum II

Info:

Periodical:

Materials Science Forum (Volumes 455-456)

Pages:

112-115

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.455-456.112

Citation:

Cite this paper

Online since:

May 2004

Authors:

Luís Pereira, Hugo Águas, Leandro Raniero, Rui Miguel S. Martins, Elvira Fortunato, Rodrigo Martins

Keywords:

Polycrystalline Silicon, Structure Influence, Substrate Influence

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] H. Wee et al.: Thin Solid Films Vol. 376 (2000), p.38.

[2] N. D. Young et al.: IEEE Trans. Electron. Devices Vol. 18, 1 (1997), p.19.

[3] Y. Kawazu, H. Kudo, S. Onari, T. Arai: Jpn. J. Appl. Phys. Vol. 29 (1990), p.729.

[4] L. Hultman, A. Roberteson, H. T. G. Hentzell, I. Engstrom, P. A. Psaras: J. Apl. Phys. Vol. 62 (1987), p.3647.

[5] G. Radnoczi, A. Robertsson, H. T. G. Hentzell, S. F. Gong, M. A. Hasam: J. Appl. Phys. Vol. 69 (1991), p.6394.

[6] S. Y. Yoon et al., Thin Solid Films Vol. 383 (2001), p.34.

[7] S. Y. Yoon et al., Solid State Commun. Vol. 106, 6 (1998), p.325.

[8] R.J. Jaccodine: J. Electrochem. Soc. Vol. 110 (1963), Vol. 524.

[9] J. H. Ahn et al.: Solar Energy Materials & Solar Cells Vol. 74 (2002), p.315.

[10] L. Pereira, H. Águas, R. M. S. Martins, F. Braz Fernandes, E. Fortunato, R. Martins: Physics and Application of Disordered Materials ed. P. Mihai (2002), p.373.