Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz

Rodrigo Martins; Hugo Águas; Isabel Ferreira; Elvira Fortunato; Leandro Raniero; Pere Roca i Cabarrocas

doi:10.4028/www.scientific.net/MSF.455-456.100

Paper Titles

Stacked a-SiC:H Optical Transducers: the Influence of the Sensing Material
p.81

Dynamic Characterization of Large Area Image Sensing Structures Based on a-SiC:H
p.86

High Sensitive Image Sensors Based on a Tandem Laser Scanned Photodiode
p.91

Effect of Annealing on Gold Rectifying Contacts in Amorphous Silicon
p.96

Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz
p.100

Batch Processing Method to Deposit a-Si:H Films by PECVD
p.104

Influence of the Rapid Thermal Annealing on the Properties of Thin a-Si Films
p.108

Role of Substrate on the Growth Process of Polycrystalline Silicon Thin Films by Low-Pressure Chemical Vapour Deposition
p.112

Spiral Inductors on Silicon for Wireless Communications
p.116

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Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz

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Materials Science Forum (Volumes 455-456)

Pages:

100-103

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.455-456.100

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Online since:

May 2004

Authors:

Rodrigo Martins, Hugo Águas, Isabel Ferreira, Elvira Fortunato, Leandro Raniero, Pere Roca i Cabarrocas

Keywords:

Polymorphous, Thin Film, Thin Film Semiconductors

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