Effect of Annealing on Gold Rectifying Contacts in Amorphous Silicon

Hugo Águas; Luís Pereira; Isabel Ferreira; A.R. Ramos; A.S. Viana; J. Andreu; Paula M. Vilarinho; Elvira Fortunato; Rodrigo Martins

doi:10.4028/www.scientific.net/MSF.455-456.96

Paper Titles

Characterization of Polymorphous Silicon Thin Film and Solar Cells
p.77

Stacked a-SiC:H Optical Transducers: the Influence of the Sensing Material
p.81

Dynamic Characterization of Large Area Image Sensing Structures Based on a-SiC:H
p.86

High Sensitive Image Sensors Based on a Tandem Laser Scanned Photodiode
p.91

Effect of Annealing on Gold Rectifying Contacts in Amorphous Silicon
p.96

Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz
p.100

Batch Processing Method to Deposit a-Si:H Films by PECVD
p.104

Influence of the Rapid Thermal Annealing on the Properties of Thin a-Si Films
p.108

Role of Substrate on the Growth Process of Polycrystalline Silicon Thin Films by Low-Pressure Chemical Vapour Deposition
p.112

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Effect of Annealing on Gold Rectifying Contacts in Amorphous Silicon

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Materials Science Forum (Volumes 455-456)

Pages:

96-99

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.455-456.96

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Online since:

May 2004

Authors:

Hugo Águas, Luís Pereira, Isabel Ferreira, A.R. Ramos, A.S. Viana, J. Andreu, Paula M. Vilarinho, Elvira Fortunato, Rodrigo Martins

Keywords:

Amorphous Silicon, Atomic Force Microscope (AFM), Au, Diffusion, MIS, RBS, Scanning Electron Microscope (SEM), Schottky, SIMS

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References

[1] S. Akita, H. Ueda, Y. Nakayama: J. Appl. Phys, Vol. 77 (1995), p.1120.

Google Scholar

[2] S.M. Sze: Physics of Semiconductor Devices, Jonh Wiley, New York, chap. 13 (1981).

Google Scholar

[3] T. Hara, S. Enomoto, H. Yamamoto, T. Tsukada: J. Non-Crystall. Solids Vol. 59-60 (1983), p.521.

Google Scholar

[4] H. Águas, Y. Nunes, E. Fortunato, P. Gordo, M. Maneira, R. Martins: Thin Solid Films Vol. 382 (2001), p.185.

DOI: 10.1016/s0040-6090(00)01605-9

Google Scholar

[5] H. Águas, A. Gonçalves, L. Pereira, R. Silva, E. Fortunato, R. Martins: Thin Solid Films Vol. 427 (2003), p.345.

DOI: 10.1016/s0040-6090(02)01220-8

Google Scholar

[6] S. Coffa, J. M. Poate, D.C. Jacobson, W. Frank, W. Gustin: Phys. Rev. B Vol. 45 (1992), p.8355.

Google Scholar

[7] S.Y. Yoon, S.J. Park, K.H. Kim, J. Jang: Thin Solid Films Vol. 383 (2001), p.34.

Google Scholar