Paper Titles

The Use of Thin Silicon Films in Flat Panel Displays
p.56

Improvement of Field-Effect Mobilities in TFTs: Surface Plasma Treatments Vs Stack Dielectric Structures
p.64

Sputtering Preparation of Silicon Nitride Thin Films for Gate Dielectric Applications
p.69

MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge
p.73

Characterization of Polymorphous Silicon Thin Film and Solar Cells
p.77

Stacked a-SiC:H Optical Transducers: the Influence of the Sensing Material
p.81

Dynamic Characterization of Large Area Image Sensing Structures Based on a-SiC:H
p.86

High Sensitive Image Sensors Based on a Tandem Laser Scanned Photodiode
p.91

Effect of Annealing on Gold Rectifying Contacts in Amorphous Silicon
p.96

HomeMaterials Science ForumMaterials Science Forum Vols. 455-456Characterization of Polymorphous Silicon Thin Film...

Characterization of Polymorphous Silicon Thin Film and Solar Cells

Article Preview

Abstract:

You might also be interested in these eBooks

Advanced Materials Forum II

Info:

Periodical:

Materials Science Forum (Volumes 455-456)

Pages:

77-80

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.455-456.77

Citation:

Cite this paper

Online since:

May 2004

Authors:

S. Zhang, Y. Xu, X. Liao, Rodrigo Martins, Elvira Fortunato, X. Zeng, Z. Hu, G. Kong

Keywords:

Polymorphous Silicon, Solar Cell, Thin Film

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] J. Zi, H. Buscher, C. Faller, W. Ludwing, K. Zhang, X. Xie: Appl. Phys. Lett. Vol. 69 (1996), p.00.

[2] P.R. Cabarrocas, P. Stahel, S. Hamma, Y. Poissant: 2 nd WPVSEC, (1998), p.355.

[3] H. Tour,K. Zellama, J.F. Morhange: Phys. Rev. B Vol. 52. (1999), p.10076.

[4] X.M. Deng, Phys. Rev. B 43, 4820, (1991).