MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge

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Materials Science Forum (Volumes 455-456)

Edited by:

Rodrigo Martins, Elvira Fortunator, Isabel Ferreira, Carlos Dias

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73-76

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H. Águas et al., "MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge", Materials Science Forum, Vols. 455-456, pp. 73-76, 2004

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May 2004

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DOI: https://doi.org/10.1016/s0040-6090(01)01656-x

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