MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge

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Periodical:

Materials Science Forum (Volumes 455-456)

Edited by:

Rodrigo Martins, Elvira Fortunator, Isabel Ferreira, Carlos Dias

Pages:

73-76

DOI:

10.4028/www.scientific.net/MSF.455-456.73

Citation:

H. Águas et al., "MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge", Materials Science Forum, Vols. 455-456, pp. 73-76, 2004

Online since:

May 2004

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$35.00

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