Stacked a-SiC:H Optical Transducers: the Influence of the Sensing Material

P. Louro; M. Fernandes; I. Rodrigues; A. Fantoni; A. Maçarico; M. Vieira

doi:10.4028/www.scientific.net/MSF.455-456.81

Paper Titles

Improvement of Field-Effect Mobilities in TFTs: Surface Plasma Treatments Vs Stack Dielectric Structures
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Sputtering Preparation of Silicon Nitride Thin Films for Gate Dielectric Applications
p.69

MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge
p.73

Characterization of Polymorphous Silicon Thin Film and Solar Cells
p.77

Stacked a-SiC:H Optical Transducers: the Influence of the Sensing Material
p.81

Dynamic Characterization of Large Area Image Sensing Structures Based on a-SiC:H
p.86

High Sensitive Image Sensors Based on a Tandem Laser Scanned Photodiode
p.91

Effect of Annealing on Gold Rectifying Contacts in Amorphous Silicon
p.96

Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz
p.100

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Stacked a-SiC:H Optical Transducers: the Influence of the Sensing Material

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Periodical:

Materials Science Forum (Volumes 455-456)

Pages:

81-85

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.455-456.81

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Online since:

May 2004

Authors:

P. Louro, M. Fernandes, I. Rodrigues, A. Fantoni, A. Maçarico, M. Vieira

Keywords:

Heterostructures, Light Sensitivity, Silicon-Carbon Devices

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References

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