High Sensitive Image Sensors Based on a Tandem Laser Scanned Photodiode

M. Vieira; M. Fernandes; P. Louro; A. Fantoni; I. Rodrigues

doi:10.4028/www.scientific.net/MSF.455-456.91

Paper Titles

MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge
p.73

Characterization of Polymorphous Silicon Thin Film and Solar Cells
p.77

Stacked a-SiC:H Optical Transducers: the Influence of the Sensing Material
p.81

Dynamic Characterization of Large Area Image Sensing Structures Based on a-SiC:H
p.86

High Sensitive Image Sensors Based on a Tandem Laser Scanned Photodiode
p.91

Effect of Annealing on Gold Rectifying Contacts in Amorphous Silicon
p.96

Composition, Structure and Optical Characteristics of Polymorphous Silicon Films Deposited by PECVD at 27.12 MHz
p.100

Batch Processing Method to Deposit a-Si:H Films by PECVD
p.104

Influence of the Rapid Thermal Annealing on the Properties of Thin a-Si Films
p.108

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High Sensitive Image Sensors Based on a Tandem Laser Scanned Photodiode

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Materials Science Forum (Volumes 455-456)

Pages:

91-95

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https://doi.org/10.4028/www.scientific.net/MSF.455-456.91

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Online since:

May 2004

Authors:

M. Vieira, M. Fernandes, P. Louro, A. Fantoni, I. Rodrigues

Keywords:

Heterojunction, Image Sensor, Simulation, Tandem a-Si:H Structures

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