Silicon Etching in CF4/O2 and SF6 Atmospheres

A. Silva; Leandro Raniero; E. Ferreira; Hugo Águas; Luís Pereira; Elvira Fortunato; Rodrigo Martins

doi:10.4028/www.scientific.net/MSF.455-456.120

Paper Titles

Batch Processing Method to Deposit a-Si:H Films by PECVD
p.104

Influence of the Rapid Thermal Annealing on the Properties of Thin a-Si Films
p.108

Role of Substrate on the Growth Process of Polycrystalline Silicon Thin Films by Low-Pressure Chemical Vapour Deposition
p.112

Spiral Inductors on Silicon for Wireless Communications
p.116

Silicon Etching in CF₄/O₂ and SF₆ Atmospheres
p.120

Optimisation of a Home-Made RIE System - Effect of SF₆ Plasma on the Properties of Partially Etched a-Si:H Films
p.124

Optical and Morphological Properties of Annealed PbS Thin Films Obtained from a Chemical Solution.
p.128

Absolute Scale Reciprocal Space Mapping on X-Ray Diffractometers Incorporating a Position Sensitive Detector: Application to III-Nitride Semiconductors
p.132

Recent Advances in Spintronics. Half-Metal Ferromagnets: Their Role in Spintronics
p.137

HomeMaterials Science ForumMaterials Science Forum Vols. 455-456Silicon Etching in CF4/O2 and SF6 Atmospheres

Silicon Etching in CF₄/O₂ and SF₆ Atmospheres

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Materials Science Forum (Volumes 455-456)

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120-123

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.455-456.120

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Online since:

May 2004

Authors:

A. Silva, Leandro Raniero, E. Ferreira, Hugo Águas, Luís Pereira, Elvira Fortunato, Rodrigo Martins

Keywords:

Amorphous Silicon, Etching, PECVD

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