Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer

K. Kakubari; R. Kuboki; Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.527-529.1031

Paper Titles

Forming Gas Annealing of the Carbon P_bC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study
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Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO₂ Interface State Density Distribution?
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Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces
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Ellipsometric and XPS Studies of 4H-SiC/SiO₂ Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces
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Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer
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Fast Non-Contact Dielectric Characterization for SiC MOS Processing
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High Temperature Reliability of SiC n-MOS Devices up to 630 °C
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High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1º) Off-Angle
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PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Real Time Observation of SiC Oxidation Using an In...

Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer

Abstract:

Real time observation of SiC oxidation was performed using an in-situ ellipsometer over the temperature range from 900°C to 1150°C. The relations between oxide thickness and oxidation time were obtained precisely by virtue of the real time measurements. We analyzed the relations between oxide thickness and oxidation time by applying the Deal and Grove model to obtain the linear and parabolic rate constants. Taking advantage of in-situ measurements, we successfully obtained the oxidation rate constants with high accuracy.

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Materials Science Forum (Volumes 527-529)

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1031-1034

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1031

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October 2006

Authors:

K. Kakubari, R. Kuboki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida

Keywords:

4H-SiC, Activation Energy, In Situ Ellipsometer, Linear Oxidation Rate Constant, Oxidation, Oxide-SiC Interface, Parabolic Oxidation Rate Constant

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