Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study
Previous Electron Paramagnetic Resonance (EPR) studies identified the carbon dangling bond center as the main paramagnetic interface defect in 3C, 4H, 6H-SiC/SiO2. We demonstrate that this defect, called PbC center, can be passivated by forming gas annealing at 400°C. We have measured the PbC density at annealed 4H- and 3C-SiC/SiO2 interfaces and attributed its reduction to the transformation of the dangling bonds into EPR inactive C-H bonds. We have also studied the reverse phenomenon occurring during vacuum annealing at temperatures ranging from 600°C up to 1000°C and have determined a dissociation energy of ≈4.3 eV for the 3C and 4H polytypes.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
J.L. Cantin and H. J. von Bardeleben, "Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study", Materials Science Forum, Vols. 527-529, pp. 1015-1018, 2006