Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study

J.L. Cantin; Hans Jürgen von Bardeleben

doi:10.4028/www.scientific.net/MSF.527-529.1015

Paper Titles

Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC
p.999

Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
p.1003

On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices
p.1007

Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination
p.1011

Forming Gas Annealing of the Carbon P_bC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study
p.1015

Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO₂ Interface State Density Distribution?
p.1019

Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces
p.1023

Ellipsometric and XPS Studies of 4H-SiC/SiO₂ Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces
p.1027

Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer
p.1031

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Forming Gas Annealing of the Carbon PbC Center in...

Forming Gas Annealing of the Carbon P_bC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study

Abstract:

Previous Electron Paramagnetic Resonance (EPR) studies identified the carbon dangling bond center as the main paramagnetic interface defect in 3C, 4H, 6H-SiC/SiO2. We demonstrate that this defect, called PbC center, can be passivated by forming gas annealing at 400°C. We have measured the PbC density at annealed 4H- and 3C-SiC/SiO2 interfaces and attributed its reduction to the transformation of the dangling bonds into EPR inactive C-H bonds. We have also studied the reverse phenomenon occurring during vacuum annealing at temperatures ranging from 600°C up to 1000°C and have determined a dissociation energy of ≈4.3 eV for the 3C and 4H polytypes.