Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing
p.987
p.987
Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces
p.991
p.991
Process-Dependent Charges and Traps in Dielectrics on SiC
p.995
p.995
Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC
p.999
p.999
Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
p.1003
p.1003
On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices
p.1007
p.1007
Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination
p.1011
p.1011
Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study
p.1015
p.1015
Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution?
p.1019
p.1019
Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 527-529)
Pages:
1003-1006
Citation:
Online since:
October 2006
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Сopyright:
© 2006 Trans Tech Publications Ltd. All Rights Reserved
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