Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution?

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The high density of interface electron traps in the SiC/SiO2 system, near the conduction band of 4H-SiC, is often ascribed to graphitic carbon islands at the interface, although such clusters could not be detected by high resolution microscopy. We have calculated the electronic structure of a model interface containing a small graphite-like precipitate of 19 carbon atoms, with a diameter of ~7 Å, corresponding to the experimental detection limit. The analysis of the density of states shows only occupied states in the band gap of 4H-SiC near the valence band edge, while carbon related unoccupied states appear only well above the conduction band edge.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1019-1022

Citation:

C. Thill et al., "Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution?", Materials Science Forum, Vols. 527-529, pp. 1019-1022, 2006

Online since:

October 2006

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