Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution?

Christoph Thill; Jan Knaup; Peter Deák; Thomas Frauenheim; Wolfgang J. Choyke

doi:10.4028/www.scientific.net/MSF.527-529.1019

Paper Titles

Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
p.1003

On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices
p.1007

Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination
p.1011

Forming Gas Annealing of the Carbon P_bC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study
p.1015

Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO₂ Interface State Density Distribution?
p.1019

Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces
p.1023

Ellipsometric and XPS Studies of 4H-SiC/SiO₂ Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces
p.1027

Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer
p.1031

Fast Non-Contact Dielectric Characterization for SiC MOS Processing
p.1035

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Where Would the Electronic States of a Small...

Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO₂ Interface State Density Distribution?

Abstract:

The high density of interface electron traps in the SiC/SiO2 system, near the conduction band of 4H-SiC, is often ascribed to graphitic carbon islands at the interface, although such clusters could not be detected by high resolution microscopy. We have calculated the electronic structure of a model interface containing a small graphite-like precipitate of 19 carbon atoms, with a diameter of ~7 Å, corresponding to the experimental detection limit. The analysis of the density of states shows only occupied states in the band gap of 4H-SiC near the valence band edge, while carbon related unoccupied states appear only well above the conduction band edge.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2005

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1019-1022

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1019

Citation:

Cite this paper

Online since:

October 2006

Authors:

Christoph Thill, Jan Knaup, Peter Deák, Thomas Frauenheim, Wolfgang J. Choyke

Keywords:

2D Confinement, Optoelectronics, Photonics, Superlattice, Tunable Absorption

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] V. V. Afanas'ev, F. Ciobanu, G. Pensl, and A. Stesmans, in Silicon Carbide - Recent Major Advances, eds. W. J. Choyke, H. Matsunami, and G. Pensl (Springer, 2003), p.343.

DOI: 10.1007/978-3-642-18870-1

Google Scholar

[2] E. Pippel, J. Woltersdorf, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson: J. Appl. Phys. 97 (2005), Nr. 034302.

Google Scholar

[3] K. -C. Chang et al.: J. Appl. Phys. 95 (2004), p.8252.

Google Scholar

[4] J.M. Knaup et al.: Phys. Rev. B 71 (2005), Nr. 235321.

Google Scholar

[5] Ch. Thill et al., to be published.

Google Scholar

[6] V. V. Afanas'ev et al.: Appl. Phys. Lett. 82 (2003), p.568.

Google Scholar

[7] J.M. Knaup et al.: Phys. Rev. B 72 (2005), Nr. 115323.

Google Scholar