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On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices
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Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Observation of Deep-Level Centers in 4H-Silicon...

Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination

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Abstract:

In this study we report on spin-dependent recombination-detected electron spin resonance of interface/near interface defects in 4H-SiC metal oxide semiconductor field effect transistors with thermally grown SiO2 gate stacks. We demonstrate a distribution of performance-limiting defects which extends beyond the SiC/SiO2 boundary into the SiC bulk. Our results strongly indicate that the defects are intrinsic and we tentatively identify them as silicon vacancy-like centers on the basis of strong, but imprecisely-resolved, 29Si hyperfine sidepeaks in the magnetic resonance spectrum.

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Silicon Carbide and Related Materials 2005

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1011-1014

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1011

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Online since:

October 2006

Authors:

Morgan S. Dautrich, Patrick M. Lenahan, Aivars J. Lelis

Keywords:

Deep level traps, Magnetic Resonance, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Point Defect, Silicon Vacancy

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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