Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination

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In this study we report on spin-dependent recombination-detected electron spin resonance of interface/near interface defects in 4H-SiC metal oxide semiconductor field effect transistors with thermally grown SiO2 gate stacks. We demonstrate a distribution of performance-limiting defects which extends beyond the SiC/SiO2 boundary into the SiC bulk. Our results strongly indicate that the defects are intrinsic and we tentatively identify them as silicon vacancy-like centers on the basis of strong, but imprecisely-resolved, 29Si hyperfine sidepeaks in the magnetic resonance spectrum.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1011-1014

Citation:

M. S. Dautrich et al., "Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination ", Materials Science Forum, Vols. 527-529, pp. 1011-1014, 2006

Online since:

October 2006

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