Process-Dependent Charges and Traps in Dielectrics on SiC

Bharat Krishnan; Hrishikesh Das; Yaroslav Koshka; Igor Sankin; P.A. Martin; Michael S. Mazzola

doi:10.4028/www.scientific.net/MSF.527-529.995

Paper Titles

Interfacial Properties of SiO₂ Grown on 4H-SiC: Comparison between N₂O and Wet O₂ Oxidation Ambient
p.979

Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC
p.983

Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N₂O Annealing
p.987

Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO₂-Interfaces
p.991

Process-Dependent Charges and Traps in Dielectrics on SiC
p.995

Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC
p.999

Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
p.1003

On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices
p.1007

Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination
p.1011

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Process-Dependent Charges and Traps in Dielectrics...

Process-Dependent Charges and Traps in Dielectrics on SiC

Abstract:

Dielectric charges and charge stability were compared in different dielectrics formed on SiC by different processing techniques. The concentration and transient behavior of the interface and trapped charges were investigated. Strong hysteresis and flat-band voltage drift under applied bias were observed in some of the samples. They are attributed to the trapping of the charge injected in the dielectrics. Differences in charge injection, charge trapping, and capture/emission of carriers by interface traps were pronounced for the investigated SiO2 and Si3N4 dielectrics.