Process-Dependent Charges and Traps in Dielectrics on SiC

Abstract:

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Dielectric charges and charge stability were compared in different dielectrics formed on SiC by different processing techniques. The concentration and transient behavior of the interface and trapped charges were investigated. Strong hysteresis and flat-band voltage drift under applied bias were observed in some of the samples. They are attributed to the trapping of the charge injected in the dielectrics. Differences in charge injection, charge trapping, and capture/emission of carriers by interface traps were pronounced for the investigated SiO2 and Si3N4 dielectrics.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

995-998

DOI:

10.4028/www.scientific.net/MSF.527-529.995

Citation:

B. Krishnan et al., "Process-Dependent Charges and Traps in Dielectrics on SiC", Materials Science Forum, Vols. 527-529, pp. 995-998, 2006

Online since:

October 2006

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Price:

$35.00

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